Spoof surface plasmon polaritons (SSPPs) effectively manipulate electromagnetic waves in the microwave frequency range through ultrathin corrugated metallic structures. This work primarily focused on SSPPs for designing active circuits. Utilizing SSPP-based output matching networks (OMN) for a dual-band power amplifier design (DBPA), offering enhanced impedance matching and bandwidth expansion. Unlike conventional microstrip, the proposed SSPP OMN employs an excavated groove-inclusion design that enhances field confinement, reduces transverse size, and enables miniaturized wideband operation. The proposed DBPA-SSPP, fabricated using CREE CG2H40010F GaN HEMT technology on Rogers RT/duroid 5880 substrates, exhibits strong agreement between experimental results and simulations, validating the effectiveness of the design methodology. The final implementation achieves frequencies of 1.69–1.89 GHz and 2.37–2.42 GHz, saturated output powers of 42.5 dBm and 40 dBm, gains of 14.5 dB and 14 dB, and drain efficiencies of 77.3% and 68.5%, respectively. Furthermore, adjacent channel power (ACP) is measured at −68.6 dBc and −64.3 dBc, with fractional bandwidths of 11.23%, and 2.08%, respectively. These results highlight the feasibility of SSPP-enabled amplifiers for sub-6 GHz 5G systems and suggest potential applications in microwave plasma communication and power delivery systems.
A compact dual-band power amplifier using spoof surface plasmon polaritons for broadband RF applications
Crupi G.Penultimo
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2026-01-01
Abstract
Spoof surface plasmon polaritons (SSPPs) effectively manipulate electromagnetic waves in the microwave frequency range through ultrathin corrugated metallic structures. This work primarily focused on SSPPs for designing active circuits. Utilizing SSPP-based output matching networks (OMN) for a dual-band power amplifier design (DBPA), offering enhanced impedance matching and bandwidth expansion. Unlike conventional microstrip, the proposed SSPP OMN employs an excavated groove-inclusion design that enhances field confinement, reduces transverse size, and enables miniaturized wideband operation. The proposed DBPA-SSPP, fabricated using CREE CG2H40010F GaN HEMT technology on Rogers RT/duroid 5880 substrates, exhibits strong agreement between experimental results and simulations, validating the effectiveness of the design methodology. The final implementation achieves frequencies of 1.69–1.89 GHz and 2.37–2.42 GHz, saturated output powers of 42.5 dBm and 40 dBm, gains of 14.5 dB and 14 dB, and drain efficiencies of 77.3% and 68.5%, respectively. Furthermore, adjacent channel power (ACP) is measured at −68.6 dBc and −64.3 dBc, with fractional bandwidths of 11.23%, and 2.08%, respectively. These results highlight the feasibility of SSPP-enabled amplifiers for sub-6 GHz 5G systems and suggest potential applications in microwave plasma communication and power delivery systems.Pubblicazioni consigliate
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