The presented work shows the results of investigations with respect to the microstructural evolution and the thermo-mechanical characterization of thick Cu films (20 mm), electrochemical deposited on silicon substrates. Warpage measurements based on Phase-Shift Moir´e principle have been performed considering different temperature profiles. A theoretical explanation has been proposed to justify experimental warpage behavior, also proofed by Differential Scanning Calorimetry (DSC).
Analysis of warpage behavior of electrochemical deposited thick copper on silicon
Calabretta M.Ultimo
2020-01-01
Abstract
The presented work shows the results of investigations with respect to the microstructural evolution and the thermo-mechanical characterization of thick Cu films (20 mm), electrochemical deposited on silicon substrates. Warpage measurements based on Phase-Shift Moir´e principle have been performed considering different temperature profiles. A theoretical explanation has been proposed to justify experimental warpage behavior, also proofed by Differential Scanning Calorimetry (DSC).File in questo prodotto:
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