Power Packages Interconnections for High Reliability Automotive Applications

In this paper an overview on Power Packages challenges and technology approaches is given. These challenges mainly originate from Silicon Carbide MOSFETs superior properties allowing high power, high temperature capability, fast switching transients and high electric field operations. All these features can be obtained in a significant reduced chip area. In order to benefit from the disrupting advantages of these wide band gap semiconductor based power devices, a strong focus on packaging and interconnection technologies is needed to withstand these challenging requirements. In addition one of the major and strong boost for Silicon Carbide technology development is given by the car electrification trend: The strict requirements for the Automotive Market are leading to a design and engineering oriented, since the preliminary stage of development, to optimize the reliability of Power Packages.