In this work, the dynamic gate stress (DGS) on a planar-gate silicon carbide MOSFET is performed based on an automotive mission profile. An extensive characterization was performed, even beyond automotive qualification guidelines, including the effect of the temperature. The results show that the temperature accelerates the threshold voltage drift, which ranges from 3 % at room temperature up to 6 % at 125 °C and 150°C, with negligible impact on the on-state resistance. Moreover, we measured the gate-source voltage waveforms before and after the DGS stress, not finding significant variations in switching gradients.
Long-Term High-Temperature Dynamic Gate Stress Reliability of a Last-Generation, Automotive-Grade, Planar 1200 V SiC MOSFET
Calabretta M.;
2025-01-01
Abstract
In this work, the dynamic gate stress (DGS) on a planar-gate silicon carbide MOSFET is performed based on an automotive mission profile. An extensive characterization was performed, even beyond automotive qualification guidelines, including the effect of the temperature. The results show that the temperature accelerates the threshold voltage drift, which ranges from 3 % at room temperature up to 6 % at 125 °C and 150°C, with negligible impact on the on-state resistance. Moreover, we measured the gate-source voltage waveforms before and after the DGS stress, not finding significant variations in switching gradients.File in questo prodotto:
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