Despite all the advancements, thermal characterization of GaN HEMT devices is still a challenging task today. In this paper we present a new transient measurement approach utilizing the gate current as temperature sensitive electric parameter (TSEP) and compare the results to the data captured using the channel resistance (Vds). The experienced differences are small, but repeatable. We examine the various factors that could cause artifacts in each method, but no evidence of measurement error was found.
Thermal transient testing alternatives for the characterisation of GaN HEMT power devices
Calabretta M.;
2022-01-01
Abstract
Despite all the advancements, thermal characterization of GaN HEMT devices is still a challenging task today. In this paper we present a new transient measurement approach utilizing the gate current as temperature sensitive electric parameter (TSEP) and compare the results to the data captured using the channel resistance (Vds). The experienced differences are small, but repeatable. We examine the various factors that could cause artifacts in each method, but no evidence of measurement error was found.File in questo prodotto:
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