Silicon nitride is particularly sensitive to high-temperature oxidation. The intensity of oxidation is influenced by the chemical composition of the amorphous phases present at the grain boundaries and consequently by the sintering additives responsible for their formation. The presence of water vapour increases Si3N4 oxidation also in intermediate temperature conditions. In this study the influence of water vapour pressure at high temperature (1200°C) on the corrosion of hot-pressed silicon nitride (HPSN) doped with Al2O3-MgO was evaluated. The water vapour has a great influence on the devitrification of the amorphous oxide upper layer, due to the formation of crystalline oxides (primarily cristobalite and tridymite). This process increases the oxidation rate, consequently increasing the porosity of the exposed surface. The microstructural evolution of HPSN in the presence of water vapour at 1200°C was analysed by SEM and XRD.

Influence of water vapour on high temperature oxidation of Al2O3-MgO doped hot pressed silicon nitride

PROVERBIO, Edoardo;
1992

Abstract

Silicon nitride is particularly sensitive to high-temperature oxidation. The intensity of oxidation is influenced by the chemical composition of the amorphous phases present at the grain boundaries and consequently by the sintering additives responsible for their formation. The presence of water vapour increases Si3N4 oxidation also in intermediate temperature conditions. In this study the influence of water vapour pressure at high temperature (1200°C) on the corrosion of hot-pressed silicon nitride (HPSN) doped with Al2O3-MgO was evaluated. The water vapour has a great influence on the devitrification of the amorphous oxide upper layer, due to the formation of crystalline oxides (primarily cristobalite and tridymite). This process increases the oxidation rate, consequently increasing the porosity of the exposed surface. The microstructural evolution of HPSN in the presence of water vapour at 1200°C was analysed by SEM and XRD.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11570/604
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