From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small-signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.

Temperature-dependent noisy models of pseudomorphic HEMTs

CADDEMI, Alina;
1994-01-01

Abstract

From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small-signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.
1994
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2209421
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