A Nd:YAg laser, operating in fundamental wavelength at 1064 nm, is focused at an intensity of the order of 10^10 W/cm^2 to ablate a solid Ge target. A Laser Ion Source (LIS) system is employed to produce ion emission at high directionality, high current, high rate of production and high charge states. LIS is used to implant and/or to deposit Ge ions in polyethylene (UHMWPE). Mechanical (roughness, wetting ability and microhardness), optical (reflectivity and transmission) and electrical properties (resistivity) were investigated, in comparison to the pristine values, in order to reach understanding of the ion implantation/deposition effects as a function of the irradiation ion dose.

Physical characterization of Ge films on polyethylene obtained by pulsed laser deposition

TORRISI, Lorenzo;CARIDI, Francesco;
2012-01-01

Abstract

A Nd:YAg laser, operating in fundamental wavelength at 1064 nm, is focused at an intensity of the order of 10^10 W/cm^2 to ablate a solid Ge target. A Laser Ion Source (LIS) system is employed to produce ion emission at high directionality, high current, high rate of production and high charge states. LIS is used to implant and/or to deposit Ge ions in polyethylene (UHMWPE). Mechanical (roughness, wetting ability and microhardness), optical (reflectivity and transmission) and electrical properties (resistivity) were investigated, in comparison to the pristine values, in order to reach understanding of the ion implantation/deposition effects as a function of the irradiation ion dose.
2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11570/2261422
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