Bias-dependent noisy characterization and modeling of polysilicon BJTs for wireless communication systems

A complete investigation on the performance of a double polysilicon self-aligned (PSA) bipolar junction transistor (BJT) in terms of noise and scattering parameters is reported. The device has been characterized over the 1 to 4 GHz frequency range in several bias conditions by means of a computer-controlled system that allows for the simultaneous determination of noise, gain and scattering parameters using only noise figure measurements. An accurate noisy model has then been extracted that reproduces the performance of the chip device. An ongoing analysis is in progress on several PSA devices having a different emitter configuration and size to assess the performance variations related to the chip structure. -------------------------------------------------------------------------------- --------------------------------------------------------------------------------