In this paper, noise characterization and modeling of a duoble polysilicon bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an automatic noise figure measuring system only. Measurements have been performed over the 1-4 GHz frequency range and at different bias conditions. The extracted model refers to the performance of the chip device since the package and bonding parasitics have been accurately de-embedded by proper calibration techniques.
Small-signal and noise model determination for double polysilicon self-aligned bipolar transistors
CADDEMI, Alina;
1994-01-01
Abstract
In this paper, noise characterization and modeling of a duoble polysilicon bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an automatic noise figure measuring system only. Measurements have been performed over the 1-4 GHz frequency range and at different bias conditions. The extracted model refers to the performance of the chip device since the package and bonding parasitics have been accurately de-embedded by proper calibration techniques.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
