Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design

Crupi, Giovanni; Raffo, A.; Avolio, G.; Bosi, G.; Sivverini, G.; Palomba, F.; Caddemi, Alina; Schreurs, D. M. M. P.; Vannini, G.

doi:10.1016/j.sse.2014.11.001

The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.

Titolo:	Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design
Autori:	CRUPI, Giovanni (Primo) (Corresponding) A. Raffo G. Avolio G. Bosi G. Sivverini F. Palomba CADDEMI, Alina D. M. M. P. Schreurs G. Vannini (Ultimo) mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2015
Rivista:	SOLID-STATE ELECTRONICS
Abstract:	The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
Handle:	http://hdl.handle.net/11570/3016576
Appare nelle tipologie:	14.a.1 Articolo su rivista

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