The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design
CRUPI, GIOVANNI
Primo
;CADDEMI, Alina;
2015-01-01
Abstract
The present paper was focused on the extraction of a GaAs pHEMT nonlinear model meant for mixer design. The model is based on an equivalent circuit that is analytically extracted from DC and multi-bias S-parameter measurements. The look-up table approach is used to implement the model in a nonlinear RF circuit simulator. The model accuracy is extensively verified by comparing device measurements and simulations under a wide range of operating conditions. Furthermore, to corroborate the validity of the model, the design of a Q-band up-converter is considered.File in questo prodotto:
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