The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for highpower and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.
Temperature Influence on GaN HEMT Equivalent Circuit
CRUPI, GIOVANNI
Primo
;CADDEMI, AlinaUltimo
2016-01-01
Abstract
The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for highpower and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.File in questo prodotto:
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