A reliable modeling procedure is developed for extracting an equivalent circuitable to reproduce the small‐signal and noise performance of the gallium nitride(GaN) high‐electron mobility transistor (HEMT) technology. The main advan-tages of this model are its simplicity and straightforward extraction based ononly pinch‐off scattering (S‐) parameter measurements. The validity of theachieved model is verified by the good agreement between high‐frequencyexperiments and simulations for three devices with different sizes. The modelreliability is further confirmed by the observed good scaling of the extractedparameters. The same model is demonstrated by designing and simulating abroadband low‐noise amplifier (LNA) for 5G applications.
Reliable noise modeling of GaN HEMTs for designing low-noise amplifiers
Crupi, Giovanni;Caddemi, Alina
2019-01-01
Abstract
A reliable modeling procedure is developed for extracting an equivalent circuitable to reproduce the small‐signal and noise performance of the gallium nitride(GaN) high‐electron mobility transistor (HEMT) technology. The main advan-tages of this model are its simplicity and straightforward extraction based ononly pinch‐off scattering (S‐) parameter measurements. The validity of theachieved model is verified by the good agreement between high‐frequencyexperiments and simulations for three devices with different sizes. The modelreliability is further confirmed by the observed good scaling of the extractedparameters. The same model is demonstrated by designing and simulating abroadband low‐noise amplifier (LNA) for 5G applications.Pubblicazioni consigliate
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