Defects and traps electrical characterization in 4H-SiC PowerMOSFET

In this thesis work, the methods used to investigate Silicon Carbide defects and the energy levels associated with them are presented. Different measurement methods will be presented to characterize the so-called "fixed charges" in gate oxide and "interface charges" in SiO2/SiC interface in 4H-SiC power MOSFET devices. These methods are effective both to be able to identify these charges, which are nothing more than defects in the material, such as the Capacitance-Voltage (CV) and conductance (GV) techniques, and to be able to qualify SiC devices in terms of reliability, for example Time Dependent Dielectric Breakdown (TDDB) test.