SiC plasma characterization produced by 3 ns pulse laser at 1010 W/cm2 intensity

A silicon carbide (SiC) plasma has been produced by a Q-switched laser at 1064 nm, 3 ns pulse and 1010 W/cm2 intensity, in high vacuum to investigate the fundamental mechanisms of laser-semiconductor interaction. Although the high hardness and chemical stability restrain the SiC micromachining, it is a valuable semiconductor for devices working under extreme conditions. The plasma has been characterized by using time-of-flight (TOF) measurements of ions detected by an ion collector ring (ICR) and an ion energy analyzer (IEA). Fast CCD camera, quadrupole mass spectroscopy (QMS) and surface profiler have been employed to provide deep insights into the laser-SiC interaction mechanisms. Ion kinetic energies, charge states, plasma expansion velocity, ablation yield per laser pulse, plasma temperature and density have been measured. Applications of the laser-generated plasma are presented and discussed.