Novel reliability tests are being developed for power semiconductor devices, especially for those based on wide band-gap materials, such as silicon carbide (SiC), in electric vehicles field. More specifically, because of the automotive environment and higher permissible slew rates in SiC devices, it is important to assess reliability in harsh conditions. Potentially related to this test, incomplete ionization of the dopants and edge termination fails are reported for SiC devices, in consequence of fast transients, but aging phenomena and parameters drift have not been deeply investigated. The purpose of this work is to evaluate the DRB test in detail, with a reliability perspective.
Reliability assessment of SiC power MOSFETs in dynamic reverse bias test
Calabretta M.Ultimo
2025-01-01
Abstract
Novel reliability tests are being developed for power semiconductor devices, especially for those based on wide band-gap materials, such as silicon carbide (SiC), in electric vehicles field. More specifically, because of the automotive environment and higher permissible slew rates in SiC devices, it is important to assess reliability in harsh conditions. Potentially related to this test, incomplete ionization of the dopants and edge termination fails are reported for SiC devices, in consequence of fast transients, but aging phenomena and parameters drift have not been deeply investigated. The purpose of this work is to evaluate the DRB test in detail, with a reliability perspective.Pubblicazioni consigliate
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