MAZZA, BRUNA
 Distribuzione geografica
Continente #
NA - Nord America 132
EU - Europa 127
AS - Asia 86
SA - Sud America 35
AF - Africa 3
Totale 383
Nazione #
US - Stati Uniti d'America 127
IT - Italia 50
IE - Irlanda 46
SG - Singapore 46
BR - Brasile 33
CN - Cina 12
HK - Hong Kong 11
SE - Svezia 9
VN - Vietnam 7
FR - Francia 6
CA - Canada 4
DE - Germania 3
RU - Federazione Russa 3
BD - Bangladesh 2
CO - Colombia 2
ES - Italia 2
GB - Regno Unito 2
ID - Indonesia 2
AM - Armenia 1
BE - Belgio 1
FI - Finlandia 1
GR - Grecia 1
HU - Ungheria 1
IQ - Iraq 1
KE - Kenya 1
KZ - Kazakistan 1
MA - Marocco 1
MX - Messico 1
MY - Malesia 1
NL - Olanda 1
OM - Oman 1
PK - Pakistan 1
PL - Polonia 1
ZA - Sudafrica 1
Totale 383
Città #
Chandler 44
Dublin 44
Singapore 21
Hong Kong 11
Ashburn 10
Nyköping 9
Dallas 7
Messina 7
Milan 5
Princeton 5
São Paulo 5
Avola 4
Cagliari 4
Ho Chi Minh City 4
Medford 4
Catania 3
Des Moines 3
Los Angeles 3
Redondo Beach 3
Vélizy-Villacoublay 3
Beijing 2
Boardman 2
Goiânia 2
Mascalucia 2
Moscow 2
New York 2
Americana 1
Amsterdam 1
Athens 1
Basra 1
Bocaiúva 1
Bogotá 1
Brasília 1
Brumado 1
Brussels 1
Buffalo 1
Bắc Ninh 1
Campinas 1
Caratinga 1
Cartagena 1
Casablanca 1
Charleston 1
Chicago 1
City of London 1
Conceição do Coité 1
Concord 1
Curitiba 1
Duncan 1
Fairfield 1
Faisalabad 1
Fátima do Sul 1
Granada 1
Guangzhou 1
Helsinki 1
Itapaci 1
Jacareí 1
Jakarta 1
Johannesburg 1
Kota Kinabalu 1
Kunming 1
Lagarto 1
Lido 1
Luziânia 1
Lyon 1
Medicilândia 1
Monclova 1
Monte Carmelo 1
Montreal 1
Montréal 1
Morristown 1
Muscat 1
Nossa Senhora das Dores 1
Nuremberg 1
Orem 1
Parauapebas 1
Pato Branco 1
Ponta Porã 1
Praia Grande 1
Ribeirão Preto 1
Shanghai 1
Sopron 1
Suzano 1
São Carlos 1
São João de Meriti 1
Taboão da Serra 1
The Dalles 1
Tianjin 1
Toronto 1
Turin 1
Uauá 1
Warsaw 1
Yerevan 1
Totale 277
Nome #
Defects and traps electrical characterization in 4H-SiC PowerMOSFET 122
Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown 84
Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC 69
Multchip SiC-based compact module for automotive applications: A high speed thermal study 67
High speed thermal mapping on six-pack SiC-based module for hybrid and electric vehicles 60
Totale 402
Categoria #
all - tutte 1.736
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.736


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202262 0 0 1 0 3 1 7 5 20 2 9 14
2022/2023121 8 11 9 16 8 7 0 2 49 1 4 6
2023/202428 5 4 2 6 0 3 0 4 0 0 0 4
2024/2025100 4 0 1 6 11 6 5 25 21 3 6 12
2025/202691 8 17 19 17 30 0 0 0 0 0 0 0
Totale 402