Light exposure effects on the DC kink of AlGaN/GaN HEMTs

Caddemi, A.; Cardillo, E.; Patane, S.; Triolo, C.

doi:10.3390/electronics8060698

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This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.

Titolo:	Light exposure effects on the DC kink of AlGaN/GaN HEMTs
Autori:	CADDEMI, Alina (Primo) CARDILLO, Emanuele (Secondo) (Corresponding) PATANE', Salvatore (Penultimo) TRIOLO, CLAUDIA (Ultimo)
Data di pubblicazione:	2019
Rivista:	ELECTRONICS
Abstract:	This paper presents the effects of optical radiation on the behavior of two scaled-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). The tested devices, having a gate width of 100 and 200 µm and a gate length of 0.25 µm, were exposed to a laser beam with a wavelength of 404 nm (blue-ray) in order to investigate the main optical effects on the DC characteristics. Owing to the threshold shift and the charge generation, a marked increase of the gate and drain current was noticed. The occurrence of the kink effect in the absence of light exposure was identified, and a hypothesis about its origin is provided. The obtained results agree with the analysis previously carried out on gallium arsenide (GaAs)-based devices.
Handle:	http://hdl.handle.net/11570/3143904
Appare nelle tipologie:	14.a.1 Articolo su rivista

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