Wave Approach to the Noise Modeling of a GaAs HEMT under Optical Illumination

GaAs-based HEMTs can be successfully employed in modern integrated communication systems as optically controlled devices. Therefore, for performing an accurate and effective noise analysis of their performance under optical illumination, an accurate noise model is needed. The wave approach has been employed for the modeling of a GaAs HEMT exposed to an optical radiation and the noise wave parameters are modeled by applying artificial neural networks. The validation of the presented approach was done by comparing the simulated and measured noise parameters without and with optical illumination.