IRIS
CRUPI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 3.463
EU - Europa 2.640
AS - Asia 529
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 3
AF - Africa 2
Totale 6.650
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Nazione #
US - Stati Uniti d'America 3.442
IE - Irlanda 1.040
SE - Svezia 743
CN - Cina 448
IT - Italia 204
UA - Ucraina 197
FI - Finlandia 144
DE - Germania 133
GB - Regno Unito 55
PL - Polonia 53
IN - India 42
BE - Belgio 28
CA - Canada 19
RU - Federazione Russa 17
KR - Corea 11
AU - Australia 6
EU - Europa 6
CH - Svizzera 5
TR - Turchia 5
TW - Taiwan 5
NL - Olanda 4
SG - Singapore 4
VN - Vietnam 4
ES - Italia 3
RO - Romania 3
AT - Austria 2
CL - Cile 2
HK - Hong Kong 2
ID - Indonesia 2
IR - Iran 2
LV - Lettonia 2
MX - Messico 2
AL - Albania 1
BR - Brasile 1
CZ - Repubblica Ceca 1
FR - Francia 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
JP - Giappone 1
KZ - Kazakistan 1
LY - Libia 1
MD - Moldavia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
Totale 6.650
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Città #
Dublin 1.040
Chandler 703
Nyköping 516
Jacksonville 452
Beijing 228
Princeton 211
Medford 164
Ashburn 154
Des Moines 154
Cambridge 148
Messina 113
Ann Arbor 105
Dearborn 89
Boardman 75
Portland 55
Warsaw 53
Wilmington 45
Woodbridge 41
Jinan 32
San Mateo 30
Shenyang 30
Catania 26
Pune 26
Brussels 25
Nanjing 18
Ottawa 17
Seattle 17
Haikou 16
Ningbo 16
Hangzhou 15
Hyderabad 12
Nanchang 10
Rome 10
Houston 9
New York 9
Washington 9
Hebei 8
Norwalk 8
Taizhou 8
Zhengzhou 7
Belpasso 6
Guangzhou 6
Tianjin 6
Falls Church 5
Los Angeles 5
Changsha 4
Dong Ket 4
Fuzhou 4
Jiaxing 4
Lappeenranta 4
Taichung 4
Tappahannock 4
Auburn Hills 3
Ferrara 3
Helsinki 3
Lanzhou 3
Lausanne 3
Leawood 3
Qingdao 3
Redwood City 3
Saint Petersburg 3
Amsterdam 2
Andover 2
Ardabil 2
Dallas 2
Delhi 2
Depok 2
Edinburgh 2
Hefei 2
Madrid 2
Manchester 2
Mexico City 2
Moscow 2
Naples 2
Padova 2
Ragusa 2
Redmond 2
Santiago 2
Shanghai 2
Singapore 2
St Petersburg 2
Sydney 2
Syracuse 2
Taiyuan 2
Vienna 2
Adelaide 1
Auckland 1
Augusta 1
Berlin 1
Birmingham 1
Boston 1
Brasov 1
Brescia 1
Brisbane 1
Bucharest 1
Cascina 1
Caselle Torinese 1
Changle 1
Charlotte 1
Chicago 1
Totale 4.850
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Nome #
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 77
Effects of Gate-Length Scaling on Microwave MOSFET Performance 76
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 66
Development and metrological evaluation of a microstrip resonator for gas sensing applications 64
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 61
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 60
Embedded DSP-based telehealth radar system for remote in-door fall detection 59
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 58
Thermal influence on S 22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications 58
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 57
Comparative analysis of microwave low-noise amplifiers under laser illumination 56
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 54
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 54
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 53
Accurate multibias equivalent-circuit extraction for GaNHEMTs 53
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 52
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 52
Technology independent non-quasi-static table-based nonlinear model generation 52
Bias and Temperature Dependent Modeling of on Wafer HEMT' s by a Direct and Fast Procedure 51
Optimizing (non-)linear measurements for model construction and validation 51
A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements 51
A link between noise parameters and light exposure in GaAs pHEMT’s 50
Electrical Characteristics of 8-nm SOI n-FinFETs 50
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 50
Evaluation of lookup table non-quasi-static nonlinear models at microwave and mm-wave frequencies 49
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 48
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 47
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 47
Temperature Influence on GaN HEMT Equivalent Circuit 47
Direct Extraction of Table-Based Non-Linear Device Models 46
A scalable HEMT noise model based on FW-EM analyses 46
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling 45
null 45
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 45
A complete microwave characterization of GaAs HEMTs under optical illumination 45
On the evaluation of the high-frequency load line in active devices 44
Kink Effect in S22 for GaN and GaAs HEMTs 44
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 43
On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz 43
null 43
Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures 43
Tecniche di caratterizzazione criogenica per dispositivi avanzati alle iperfrequenze 42
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 42
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 42
Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs 42
Waveforms only based nonlinear de-embedding in active devices 42
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 42
null 41
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 41
Determination and validation of new nonlinear FinFET model based on lookup tables 40
Purely Analytical Extraction of an Improved Non-linear FinFET Model Including Non-Quasi-Static Effects 40
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 40
Measurement-Based Extraction and Analysis of a Temperature-Dependent Equivalent-Circuit Model for a SAW Resonator: From Room down to Cryogenic Temperatures 40
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 40
An efficient near-lossless compression algorithm for multichannel EEG signals 40
Temperature dependent vector large-signal measurements 39
Non-linear measurement techniques for the low- and high-frequency characterization of microwave active devices 39
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's 39
null 39
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 38
Performance analysis of a microwave low-noise amplifier under laser illumination 38
2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint 38
Source-pull characterization of FinFET noise 37
Investigation on the thermal behavior for microwave GaN HEMTs 37
A review on the artificial neural network applications for small-signal modeling of microwave FETs 37
Device Noise Parameters Characterization: Towards Extraction Automation 37
Cryogenic Electrical Characterization and Equivalent-Circuit Modeling of SAW Resonators 37
Characterization and neural modeling of a microwave gas sensor for oxygen detection aimed at healthcare applications 37
Artificial neural network based modeling of FinFET forward transmission Coefficient 37
Extraction and Analysis of Noise Parameters of On Wafer HEMTs up to 26.5 GHz 37
Development of an Inkjet-Printed Interdigitated Device: CAD, Fabrication, and Testing 37
Equivalent circuit based non-linear microwave model for FinFET's 36
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 36
Microwave Modelling of Emerging Device Technologies 36
Nonlinear dispersive modeling of electronc devices oriented to GaN power amplifier design 36
null 36
null 36
Artificial Neural Network Modeling of Interdigital Capacitor Sensor for Oxygen Detection 36
On the design and characterisation of a microwave microstrip resonator for gas sensing applications 36
Application of Artificial Neural Networks for Modeling of the Frequency-Dependent Performance of Surface Acoustic Wave Resonators 36
Development of a multi-transduction system for breath analysis in neurodegenerative diseases 36
Extraction of the Resonant Parameters for Surface Acoustic Wave Resonators: ANNs versus Lorentzian Fitting Method 36
Impact of the self-generated heat on the scalability of HEMTs 35
Vector two-tone measurements for validation of non-linear microwave FinFET model 35
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 35
Equivalent-circuit–based modeling of the scattering and noise parameters for multi-finger GaAs pHEMTs 35
Non-quasi-static nonlinear model for FinFETs using higher-order sources 34
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 34
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 34
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 34
On the Gas Sensing Properties of Microwave Transducers 34
Current-gain in FETs beyond cut-off frequency 34
Theoretical and experimental determination of onset and scaling of non-quasi-static phenomena for interdigitated FinFETs 33
Microwave noise modeling of FinFETs 33
Microwave small-signal modeling of FinFETs using multi-parameter rational fitting method 33
GaN HEMT Noise Model Based on Electromagnetic Simulations 33
GaN HEMT noise modeling based on 50-Ω noise factor 33
Analytical construction of nonlinear lookup table model for advanced microwave transistors 32
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 32
Empowering GaN HEMT models: The gateway for power amplifier design 32
Totale 4.313
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Categoria #
all - tutte 31.709
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.709
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201913 0 0 0 0 0 0 0 0 0 0 1 12
2019/2020872 89 42 6 28 6 109 98 68 19 197 195 15
2020/2021818 111 20 187 34 120 88 23 56 21 76 47 35
2021/20221.101 49 50 34 33 35 4 91 50 11 59 233 452
2022/20232.974 267 206 117 227 195 274 34 168 1.278 73 96 39
2023/2024673 77 127 58 98 64 98 45 40 23 41 2 0
Totale 7.130