IRIS
CRUPI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 9.232
EU - Europa 7.945
AS - Asia 5.542
SA - Sud America 2.037
Continente sconosciuto - Info sul continente non disponibili 632
AF - Africa 164
OC - Oceania 11
Totale 25.563
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Nazione #
US - Stati Uniti d'America 8.876
RU - Federazione Russa 4.266
SG - Singapore 2.595
BR - Brasile 1.721
CN - Cina 1.286
IE - Irlanda 1.041
SE - Svezia 763
HK - Hong Kong 663
IT - Italia 463
VN - Vietnam 304
DE - Germania 268
FI - Finlandia 227
UA - Ucraina 225
FR - Francia 222
IN - India 149
GB - Regno Unito 148
CA - Canada 126
AR - Argentina 108
PL - Polonia 84
BD - Bangladesh 75
TR - Turchia 65
IQ - Iraq 62
MX - Messico 58
EC - Ecuador 49
VE - Venezuela 42
ID - Indonesia 40
NL - Olanda 37
PK - Pakistan 37
ZA - Sudafrica 37
CO - Colombia 36
MA - Marocco 36
CZ - Repubblica Ceca 33
JP - Giappone 33
PY - Paraguay 32
BE - Belgio 30
ES - Italia 28
UZ - Uzbekistan 27
CR - Costa Rica 25
HN - Honduras 25
KR - Corea 24
AE - Emirati Arabi Uniti 19
CL - Cile 19
TN - Tunisia 19
NI - Nicaragua 18
JO - Giordania 17
GT - Guatemala 16
IL - Israele 16
JM - Giamaica 15
DZ - Algeria 14
SA - Arabia Saudita 14
TT - Trinidad e Tobago 14
AT - Austria 13
AL - Albania 12
CH - Svizzera 12
KE - Kenya 12
KZ - Kazakistan 12
MY - Malesia 12
PR - Porto Rico 12
SV - El Salvador 12
PE - Perù 11
PH - Filippine 11
UY - Uruguay 11
TW - Taiwan 10
AU - Australia 9
DO - Repubblica Dominicana 9
EG - Egitto 9
GP - Guadalupe 9
OM - Oman 9
PT - Portogallo 9
AZ - Azerbaigian 8
EE - Estonia 8
KG - Kirghizistan 8
PS - Palestinian Territory 8
CW - ???statistics.table.value.countryCode.CW??? 7
TH - Thailandia 7
BO - Bolivia 6
ET - Etiopia 6
EU - Europa 6
LV - Lettonia 6
MD - Moldavia 6
RS - Serbia 6
DK - Danimarca 5
LT - Lituania 5
NP - Nepal 5
RO - Romania 5
SC - Seychelles 5
SK - Slovacchia (Repubblica Slovacca) 5
AO - Angola 4
BB - Barbados 4
BH - Bahrain 4
HU - Ungheria 4
IR - Iran 4
PA - Panama 4
SN - Senegal 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BY - Bielorussia 3
CI - Costa d'Avorio 3
GE - Georgia 3
LB - Libano 3
Totale 24.899
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Città #
Moscow 1.411
Ashburn 1.167
Singapore 1.163
Dublin 1.037
Dallas 895
Chandler 693
Hong Kong 655
San Jose 595
Nyköping 514
Jacksonville 459
Council Bluffs 448
Beijing 410
The Dalles 219
Princeton 211
Los Angeles 178
Lauterbourg 176
Medford 164
Des Moines 156
Messina 153
Cambridge 148
Ho Chi Minh City 113
São Paulo 112
Ann Arbor 106
Santa Clara 95
Buffalo 91
Dearborn 89
Boardman 85
Warsaw 84
New York 78
Hanoi 76
Redondo Beach 74
Munich 69
Rio de Janeiro 61
Portland 60
Turku 55
Tianjin 50
Belo Horizonte 45
Guangzhou 45
Wilmington 45
North Bergen 44
Orem 41
Woodbridge 41
Rome 40
Brasília 39
Catania 39
Atlanta 38
Brooklyn 35
Columbus 34
Houston 33
Jinan 33
Shanghai 33
Phoenix 32
Chennai 31
Shenyang 31
San Mateo 30
Seattle 28
Curitiba 27
Pune 27
Tashkent 27
Tokyo 27
Brussels 26
Mexico City 26
Nuremberg 25
Brno 24
Chicago 24
Frankfurt am Main 24
Baghdad 22
Denver 22
Hangzhou 22
Guayaquil 21
Nanjing 21
Shenzhen 21
Lappeenranta 20
Porto Alegre 20
San Francisco 20
Stockholm 20
Amsterdam 19
Haiphong 19
Hyderabad 19
Montreal 19
Ottawa 18
Salvador 18
Haikou 17
Managua 17
Ningbo 17
San José 17
Asunción 16
Guarulhos 16
Johannesburg 16
Ribeirão Preto 16
Amman 15
Campinas 15
Istanbul 15
João Pessoa 15
Milan 15
Quito 15
Walnut 15
Helsinki 14
Manchester 14
Philadelphia 14
Totale 13.744
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Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 312
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 219
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 204
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 199
A complete microwave characterization of GaAs HEMTs under optical illumination 193
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 193
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 180
A link between noise parameters and light exposure in GaAs pHEMT’s 177
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 175
3D Investigation of 8-nm Tapered n-FinFET Model 173
Characterization and neural modeling of a microwave gas sensor for oxygen detection aimed at healthcare applications 173
A Combined Approach Using Lorentzian Fitting and ANNs for Microwave Resonator Modeling 173
Artificial Neural Network Modeling of Interdigital Capacitor Sensor for Oxygen Detection 164
An efficient near-lossless compression algorithm for multichannel EEG signals 162
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 159
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 159
A clear-cut introduction to the de-embedding concept: less is more 158
2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint 157
Embedded DSP-based telehealth radar system for remote in-door fall detection 156
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 156
A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements 153
Development and metrological evaluation of a microstrip resonator for gas sensing applications 153
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 152
Development, Characterization, and Circuit Modeling of Inkjet-Printed Coupled Ring Resonators for Application in Biological Samples 150
A Broadband Outphasing GaN Power Amplifier Based on Reconfigurable Output Combiner 149
Comparative analysis of microwave low-noise amplifiers under laser illumination 148
Application of Artificial Neural Networks for Modeling of the Frequency-Dependent Performance of Surface Acoustic Wave Resonators 148
A review on the artificial neural network applications for small-signal modeling of microwave FETs 147
Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures 144
A low-cost measurement system for microplastic detection in marine environment: A proof of concept 143
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 143
Electrical Characteristics of 8-nm SOI n-FinFETs 141
Artificial Neural Network Modeling of Microwave Sensors for Dielectric Liquids Characterization 140
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 137
A Broadband Asymmetric Doherty Power Amplifier Design Based on Multi-Objective Bayesian Optimization: Theoretical and Experimental Validation 135
GaN HEMT noise modeling based on 50-Ω noise factor 134
Measurement-Based Extraction and Analysis of a Temperature-Dependent Equivalent-Circuit Model for a SAW Resonator: From Room down to Cryogenic Temperatures 133
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 131
Equivalent Circuit Model Extraction for a SAW Resonator: Below and above Room Temperature 128
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 127
A Broadband PA Design Based on Bayesian Optimization Augmented by Dynamic Feasible Region Shrinkage 125
A scalable HEMT noise model based on FW-EM analyses 124
Determination and validation of new nonlinear FinFET model based on lookup tables 123
Microfluidic Biosensor for Bioengineering: High-frequency Equivalent-Circuit Modeling of Interdigital Capacitor 123
Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET 123
Effects of Gate-Length Scaling on Microwave MOSFET Performance 121
Design and Characterization of a Microwave Transducer for Gas Sensing Applications 121
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 119
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 118
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 118
GaN HEMT modelling through 50-Ω NF measurements 118
GaN HEMT Noise Model Based on Electromagnetic Simulations 118
On the design and characterisation of a microwave microstrip resonator for gas sensing applications 118
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 117
Accurate multibias equivalent-circuit extraction for GaNHEMTs 117
Temperature Influence on GaN HEMT Equivalent Circuit 116
Device Noise Parameters Characterization: Towards Extraction Automation 116
A Simple and Efficient Near-lossless Compression Algorithm for Surface ElectroMyoGraphy Signals 115
A neural network approach for nonlinear modelling of LDMOSFETs 115
Kink Effect in S22 for GaN and GaAs HEMTs 115
Performance analysis of a microwave low-noise amplifier under laser illumination 115
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 112
Black-box noise modeling of GaAs HEMTs under illumination 112
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 112
2016 MTT-S Graduate Student Fellowship Awards 111
Multibias and temperature dependence of the current-gain peak in GaN HEMT 111
Optical Sensitivity of HEMT-based Devices and Low-Noise Amplifiers 111
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 110
2014 MTT-S Graduate Student Fellowship Awards 110
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 107
Investigation on the thermal behavior for microwave GaN HEMTs 107
High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer 106
Direct Extraction of Table-Based Non-Linear Device Models 106
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 106
Bias and Temperature Dependent Modeling of on Wafer HEMT' s by a Direct and Fast Procedure 106
2013 MTT-S Graduate Student Fellowship Awards 105
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 105
Effects of varying the fin width, fin height, gate dielectric material, and gate length on the dc and rf performance of a 14-nm soi finfet structure 105
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 104
Optimizing (non-)linear measurements for model construction and validation 104
Current-gain in FETs beyond cut-off frequency 104
A Split-Ring Resonator with Interdigitated Electrodes Aimed at the Dielectric Characterization of Liquid Mixtures (Invited Paper) 103
Theoretical and Experimental Investigation of an Efficient SVD-based Near-lossless Compression Algorithm for Multichannel EEG Signals 103
2015 MTT-S Graduate Student Fellowship Awards [Education News] 103
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 102
Development of an Inkjet-Printed Interdigitated Device: CAD, Fabrication, and Testing 102
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 101
Analytical construction of nonlinear lookup table model for advanced microwave transistors 101
Extraction of the Resonant Parameters for Surface Acoustic Wave Resonators: ANNs versus Lorentzian Fitting Method 101
Threshold Optimized CSWPL Behavioral Model for RF Power Transistors Based on Particle Swarm Algorithm 100
Evaluation of lookup table non-quasi-static nonlinear models at microwave and mm-wave frequencies 100
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 100
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 99
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's 99
Tecniche di caratterizzazione criogenica per dispositivi avanzati alle iperfrequenze 98
Microwave Modelling of Emerging Device Technologies 98
Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination 98
Guest Editorial 97
Biosensor Using a One-Port Interdigital Capacitor: A Resonance-Based Investigation of the Permittivity Sensitivity for Microfluidic Broadband Bioelectronics Applications 97
Scalability of Multifinger HEMT Performance 97
Totale 13.026
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Categoria #
all - tutte 99.442
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 99.442
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022930 0 0 0 0 35 4 90 50 11 59 233 448
2022/20232.948 265 203 115 225 194 271 34 167 1.268 73 94 39
2023/2024790 77 125 58 98 64 98 45 40 23 41 19 102
2024/20254.413 69 43 105 192 270 98 146 850 1.181 243 403 813
2025/202611.175 403 816 1.021 867 987 2.436 1.337 1.150 1.135 504 280 239
2026/20272.784 265 607 683 1.089 140 0 0 0 0 0 0 0
Totale 25.563