IRIS
CRUPI, Giovanni
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.727
AS - Asia 4.234
EU - Europa 3.366
SA - Sud America 1.870
AF - Africa 106
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 8
Totale 15.320
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.606
SG - Singapore 2.096
BR - Brasile 1.651
IE - Irlanda 1.045
CN - Cina 851
SE - Svezia 763
HK - Hong Kong 611
IT - Italia 308
VN - Vietnam 246
DE - Germania 238
FI - Finlandia 226
UA - Ucraina 217
RU - Federazione Russa 200
IN - India 104
GB - Regno Unito 87
AR - Argentina 83
PL - Polonia 78
CA - Canada 53
TR - Turchia 46
BD - Bangladesh 45
MX - Messico 43
CZ - Repubblica Ceca 33
EC - Ecuador 33
ID - Indonesia 32
BE - Belgio 29
IQ - Iraq 29
MA - Marocco 29
ZA - Sudafrica 29
PY - Paraguay 28
FR - Francia 26
VE - Venezuela 25
PK - Pakistan 21
UZ - Uzbekistan 19
ES - Italia 17
KR - Corea 17
CO - Colombia 16
NL - Olanda 16
AT - Austria 13
CL - Cile 13
JO - Giordania 13
AE - Emirati Arabi Uniti 12
AL - Albania 12
JP - Giappone 12
TN - Tunisia 10
KE - Kenya 9
KZ - Kazakistan 9
PE - Perù 9
TW - Taiwan 9
UY - Uruguay 9
AU - Australia 8
CH - Svizzera 8
OM - Oman 8
KG - Kirghizistan 7
DO - Repubblica Dominicana 6
EG - Egitto 6
EU - Europa 6
IL - Israele 6
PT - Portogallo 6
AZ - Azerbaigian 5
LT - Lituania 5
LV - Lettonia 5
NI - Nicaragua 5
RO - Romania 5
RS - Serbia 5
DZ - Algeria 4
HN - Honduras 4
IR - Iran 4
JM - Giamaica 4
SK - Slovacchia (Repubblica Slovacca) 4
AO - Angola 3
BG - Bulgaria 3
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
GE - Georgia 3
HU - Ungheria 3
LB - Libano 3
LY - Libia 3
MD - Moldavia 3
NG - Nigeria 3
NP - Nepal 3
SA - Arabia Saudita 3
BA - Bosnia-Erzegovina 2
BN - Brunei Darussalam 2
BW - Botswana 2
CR - Costa Rica 2
CY - Cipro 2
GA - Gabon 2
KH - Cambogia 2
LK - Sri Lanka 2
MY - Malesia 2
PA - Panama 2
PS - Palestinian Territory 2
SN - Senegal 2
XK - ???statistics.table.value.countryCode.XK??? 2
AD - Andorra 1
BB - Barbados 1
CI - Costa d'Avorio 1
DK - Danimarca 1
ET - Etiopia 1
Totale 15.307
Salva come PNG Salva come JPEG
Città #
Dublin 1.044
Dallas 879
Singapore 825
Chandler 703
Hong Kong 608
Nyköping 516
Ashburn 503
Jacksonville 452
Beijing 384
Princeton 211
Medford 164
Des Moines 154
Los Angeles 154
Messina 150
Cambridge 148
Ann Arbor 105
São Paulo 104
The Dalles 101
Ho Chi Minh City 99
Dearborn 89
Buffalo 86
Boardman 82
Redondo Beach 74
Warsaw 74
Munich 69
Rio de Janeiro 62
Hanoi 58
Portland 56
Turku 55
New York 53
Moscow 49
Wilmington 45
Belo Horizonte 43
Woodbridge 41
Catania 39
Tianjin 36
Brasília 35
Jinan 33
San Mateo 30
Shenyang 30
Pune 27
Brussels 26
Curitiba 26
Seattle 26
Brno 24
Nuremberg 24
Chennai 23
Brooklyn 22
Rome 21
Lappeenranta 20
Santa Clara 20
Atlanta 19
Hangzhou 19
Porto Alegre 19
Stockholm 19
Tashkent 19
Nanjing 18
Ottawa 18
Haikou 17
Hyderabad 16
Mexico City 16
Ningbo 16
Ribeirão Preto 16
Salvador 16
Campinas 15
Guarulhos 15
Houston 15
Montreal 15
Orem 15
Baghdad 14
Denver 14
Haiphong 14
Helsinki 14
Asunción 13
Goiânia 13
Johannesburg 13
João Pessoa 13
Cape Town 12
Council Bluffs 12
Fortaleza 12
Guayaquil 12
Sorocaba 12
Sumaré 12
Uberlândia 12
Amman 11
Istanbul 11
Jakarta 11
Poplar 11
Quito 11
Tokyo 11
Caxias do Sul 10
Nanchang 10
Osasco 10
Phoenix 10
San Francisco 10
St Petersburg 10
Contagem 9
Lubbock 9
Lynnwood 9
Piracicaba 9
Totale 9.359
Salva come PNG Salva come JPEG
Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 277
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 132
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 130
A complete microwave characterization of GaAs HEMTs under optical illumination 128
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 125
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 120
A link between noise parameters and light exposure in GaAs pHEMT’s 118
A Combined Approach Using Lorentzian Fitting and ANNs for Microwave Resonator Modeling 112
Development and metrological evaluation of a microstrip resonator for gas sensing applications 110
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 108
Characterization and neural modeling of a microwave gas sensor for oxygen detection aimed at healthcare applications 108
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 107
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 106
An efficient near-lossless compression algorithm for multichannel EEG signals 106
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 103
Application of Artificial Neural Networks for Modeling of the Frequency-Dependent Performance of Surface Acoustic Wave Resonators 102
A clear-cut introduction to the de-embedding concept: less is more 100
Embedded DSP-based telehealth radar system for remote in-door fall detection 99
Effects of Gate-Length Scaling on Microwave MOSFET Performance 99
2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint 99
A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements 97
Comparative analysis of microwave low-noise amplifiers under laser illumination 97
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 97
Artificial Neural Network Modeling of Interdigital Capacitor Sensor for Oxygen Detection 97
Electrical Characteristics of 8-nm SOI n-FinFETs 93
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 91
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 89
Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures 89
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 88
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 87
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 87
A review on the artificial neural network applications for small-signal modeling of microwave FETs 86
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 85
Thermal influence on S 22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications 85
Equivalent Circuit Model Extraction for a SAW Resonator: Below and above Room Temperature 85
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 84
GaN HEMT noise modeling based on 50-Ω noise factor 84
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 82
Accurate multibias equivalent-circuit extraction for GaNHEMTs 82
3D Investigation of 8-nm Tapered n-FinFET Model 82
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 82
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 81
Temperature Influence on GaN HEMT Equivalent Circuit 80
Measurement-Based Extraction and Analysis of a Temperature-Dependent Equivalent-Circuit Model for a SAW Resonator: From Room down to Cryogenic Temperatures 80
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 79
Design and Characterization of a Microwave Transducer for Gas Sensing Applications 79
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 78
Bias and Temperature Dependent Modeling of on Wafer HEMT' s by a Direct and Fast Procedure 78
Implementation of Non-Linear Model Based on Lookup Table Approach 78
Optimizing (non-)linear measurements for model construction and validation 76
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 75
High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer 74
Development, Characterization, and Circuit Modeling of Inkjet-Printed Coupled Ring Resonators for Application in Biological Samples 74
Direct Extraction of Table-Based Non-Linear Device Models 74
Performance analysis of a microwave low-noise amplifier under laser illumination 74
Artificial Neural Network Modeling of Microwave Sensors for Dielectric Liquids Characterization 73
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 73
GaN HEMT Noise Model Based on Electromagnetic Simulations 73
A scalable HEMT noise model based on FW-EM analyses 73
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling 72
A Broadband Asymmetric Doherty Power Amplifier Design Based on Multi-Objective Bayesian Optimization: Theoretical and Experimental Validation 71
Determination and validation of new nonlinear FinFET model based on lookup tables 71
Black-box noise modeling of GaAs HEMTs under illumination 71
A low-cost measurement system for microplastic detection in marine environment: A proof of concept 70
A Broadband Outphasing GaN Power Amplifier Based on Reconfigurable Output Combiner 70
Evaluation of lookup table non-quasi-static nonlinear models at microwave and mm-wave frequencies 70
Investigation on the thermal behavior for microwave GaN HEMTs 70
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 70
A neural network approach for nonlinear modelling of LDMOSFETs 70
GaN HEMT modelling through 50-Ω NF measurements 70
A Simple and Efficient Near-lossless Compression Algorithm for Surface ElectroMyoGraphy Signals 69
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 69
Tecniche di caratterizzazione criogenica per dispositivi avanzati alle iperfrequenze 69
Technology independent non-quasi-static table-based nonlinear model generation 69
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 69
Device Noise Parameters Characterization: Towards Extraction Automation 69
Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET 69
Microwave Modelling of Emerging Device Technologies 68
On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz 68
Temperature dependent vector large-signal measurements 68
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's 68
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 68
Analytical construction of nonlinear lookup table model for advanced microwave transistors 67
Impact of the self-generated heat on the scalability of HEMTs 67
Kink Effect in S22 for GaN and GaAs HEMTs 67
2014 MTT-S Graduate Student Fellowship Awards 67
Current-gain in FETs beyond cut-off frequency 67
Neural Modeling of the Surface Acoustic Wave Resonator Admittance Parameters 67
Theoretical and Experimental Investigation of an Efficient SVD-based Near-lossless Compression Algorithm for Multichannel EEG Signals 66
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 66
Cryogenic Electrical Characterization and Equivalent-Circuit Modeling of SAW Resonators 66
Microfluidic Biosensor for Bioengineering: High-frequency Equivalent-Circuit Modeling of Interdigital Capacitor 66
Extraction of the Resonant Parameters for Surface Acoustic Wave Resonators: ANNs versus Lorentzian Fitting Method 66
Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs 65
On the evaluation of the high-frequency load line in active devices 65
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 65
Equivalent-circuit–based modeling of the scattering and noise parameters for multi-finger GaAs pHEMTs 65
On the design and characterisation of a microwave microstrip resonator for gas sensing applications 65
Effects of varying the fin width, fin height, gate dielectric material, and gate length on the dc and rf performance of a 14-nm soi finfet structure 65
Development of an Inkjet-Printed Interdigitated Device: CAD, Fabrication, and Testing 65
Totale 8.395
Salva come PNG Salva come JPEG
Categoria #
all - tutte 71.016
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 71.016
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021346 0 0 0 0 0 88 23 56 21 76 47 35
2021/20221.101 49 50 34 33 35 4 91 50 11 59 233 452
2022/20232.974 267 206 117 227 195 274 34 168 1.278 73 96 39
2023/2024792 77 127 58 98 64 98 45 40 23 41 19 102
2024/20254.430 69 43 105 192 271 98 146 857 1.186 244 403 816
2025/20264.238 404 818 1.024 869 989 134 0 0 0 0 0 0
Totale 15.917