IRIS
CADDEMI, Alina
 Distribuzione geografica
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Continente #
EU - Europa 7.661
NA - Nord America 7.425
AS - Asia 4.859
SA - Sud America 1.907
AF - Africa 131
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 9
Totale 22.002
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Nazione #
US - Stati Uniti d'America 7.259
RU - Federazione Russa 4.021
SG - Singapore 2.349
BR - Brasile 1.653
CN - Cina 1.217
IE - Irlanda 1.027
SE - Svezia 838
HK - Hong Kong 500
UA - Ucraina 377
DE - Germania 315
VN - Vietnam 256
FR - Francia 229
FI - Finlandia 226
IT - Italia 223
GB - Regno Unito 152
IN - India 92
AR - Argentina 84
PL - Polonia 81
CA - Canada 67
BD - Bangladesh 53
TR - Turchia 53
IQ - Iraq 49
MX - Messico 49
EC - Ecuador 46
BE - Belgio 37
MA - Marocco 36
UZ - Uzbekistan 35
ID - Indonesia 34
PY - Paraguay 31
ZA - Sudafrica 29
VE - Venezuela 27
JP - Giappone 26
PK - Pakistan 26
CZ - Repubblica Ceca 24
KR - Corea 22
CO - Colombia 21
TN - Tunisia 21
CL - Cile 20
ES - Italia 20
SA - Arabia Saudita 15
NL - Olanda 14
JM - Giamaica 13
IL - Israele 12
UY - Uruguay 12
AE - Emirati Arabi Uniti 11
AL - Albania 11
DZ - Algeria 11
JO - Giordania 11
KZ - Kazakistan 11
PE - Perù 11
AT - Austria 10
DO - Repubblica Dominicana 9
EG - Egitto 9
AU - Australia 8
IR - Iran 8
KE - Kenya 8
PH - Filippine 8
RO - Romania 8
AZ - Azerbaigian 7
EU - Europa 7
NI - Nicaragua 7
NP - Nepal 7
PS - Palestinian Territory 7
HN - Honduras 6
KG - Kirghizistan 6
LV - Lettonia 6
PT - Portogallo 6
LB - Libano 5
OM - Oman 5
TW - Taiwan 5
CH - Svizzera 4
GR - Grecia 4
LT - Lituania 4
MY - Malesia 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BH - Bahrain 3
GE - Georgia 3
GT - Guatemala 3
LU - Lussemburgo 3
MN - Mongolia 3
NG - Nigeria 3
PA - Panama 3
AO - Angola 2
BN - Brunei Darussalam 2
BO - Bolivia 2
BW - Botswana 2
CY - Cipro 2
DK - Danimarca 2
ET - Etiopia 2
HR - Croazia 2
HU - Ungheria 2
LI - Liechtenstein 2
LK - Sri Lanka 2
MD - Moldavia 2
MU - Mauritius 2
PR - Porto Rico 2
RS - Serbia 2
SV - El Salvador 2
TH - Thailandia 2
Totale 21.976
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Città #
Moscow 1.328
Singapore 1.039
Dublin 1.027
Ashburn 901
Chandler 822
Jacksonville 760
Dallas 724
Nyköping 599
Hong Kong 499
Beijing 424
San Jose 295
The Dalles 250
Princeton 242
Medford 219
Cambridge 206
Des Moines 206
Lauterbourg 202
Los Angeles 177
Dearborn 157
Ann Arbor 135
Buffalo 121
Boardman 117
Messina 106
Ho Chi Minh City 100
São Paulo 97
Warsaw 77
Council Bluffs 69
Hanoi 55
Rio de Janeiro 53
Redondo Beach 51
San Mateo 46
Woodbridge 45
Orem 44
New York 43
Wilmington 43
Belo Horizonte 41
Guangzhou 41
Jinan 41
Santa Clara 39
Brasília 38
Shenyang 37
Brussels 34
Shanghai 33
Tashkent 33
Tianjin 33
Munich 31
Nanjing 31
Portland 29
Turku 29
Frankfurt am Main 28
Seattle 28
Hangzhou 26
Curitiba 25
Hebei 24
Zhengzhou 24
Haikou 23
Baghdad 21
Ningbo 21
Houston 20
Ottawa 20
Pune 20
Brooklyn 19
Tokyo 19
Chennai 18
Shenzhen 18
Brno 17
Guayaquil 17
Quito 16
Asunción 15
Goiânia 15
Nanchang 15
Salvador 15
Sorocaba 15
Stockholm 15
Atlanta 14
Dhaka 14
Fortaleza 14
Montreal 14
Uberlândia 14
Manchester 13
Nuremberg 13
Osasco 13
Porto Alegre 13
Ribeirão Preto 13
Rome 13
Taizhou 13
Haiphong 12
Jakarta 12
Campinas 11
Denver 11
Fuzhou 11
Istanbul 11
Johannesburg 11
Mexico City 11
Montevideo 11
San Francisco 11
Sumaré 11
Catania 10
Leawood 10
London 10
Totale 12.577
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Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 298
A neural network approach for compact cryogenic modelling of HEMTs 195
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 192
A complete microwave characterization of GaAs HEMTs under optical illumination 184
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 182
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 178
An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier 174
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 168
Light exposure effects on the DC kink of AlGaN/GaN HEMTs 168
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 162
A link between noise parameters and light exposure in GaAs pHEMT’s 160
A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier 158
A low-cost smart microwave radar for short range measurements 154
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 150
A global approach to the noise and small-signal characterization of microwave field-effect transistors 147
A clear-cut introduction to the de-embedding concept: less is more 147
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 146
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 144
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction 143
A feasibility study of a compact radar system for autonomous walking of blind people 141
An Electromagnetic Sensor Prototype to Assist Visually Impaired and Blind People in Autonomous Walking 140
A novel approach for crosstalk minimisation in frequency modulated continuous wave radars 140
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 137
Comparative analysis of microwave low-noise amplifiers under laser illumination 135
A review on biomedical mimo radars for vital sign detection and human localization 134
Simulating noise performance of advanced devices down to cryogenic temperatures 133
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 133
Automotive Anti-Abandon Systems: A Millimeter-Wave Radar Sensor for the Detection of Child Presence 131
A review on the artificial neural network applications for small-signal modeling of microwave FETs 130
Electrical Characteristics of 8-nm SOI n-FinFETs 128
GaN HEMT noise modeling based on 50-Ω noise factor 126
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 124
Noise parameters of HEMTs: Analysis of their properties from a circuit model approach 122
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 119
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies 118
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures 118
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks 117
A scalable HEMT noise model based on FW-EM analyses 116
Cryogenic HEMT noise modeling by artificial neural networks 115
Determination and validation of new nonlinear FinFET model based on lookup tables 115
A study on dynamic threshold for the crosstalk reduction in frequency-modulated radars 114
Effects of Gate-Length Scaling on Microwave MOSFET Performance 114
Full characterization of microwave low-noise HEMTs: Measurement vs. Modeling 113
Vital Sign Detection and Radar Self-Motion Cancellation through Clutter Identification 113
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 113
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 111
GaN HEMT modelling through 50-Ω NF measurements 111
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 110
Thin-film sensors for industrial electronics: Performance evaluation by circuit model simulation 110
Artificial neural networks for small-signal modelling of microwave FET's 109
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 108
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 107
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 107
Full characterization of microwave low noise HEMTs: measurements vs. modeling 107
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 107
A neural network approach for nonlinear modelling of LDMOSFETs 107
Black-box noise modeling of GaAs HEMTs under illumination 107
Performance analysis of a microwave low-noise amplifier under laser illumination 106
A straight-line equation for the notch tailoring of a microwave extra wideband filter 106
Accurate multibias equivalent-circuit extraction for GaNHEMTs 105
Systematic experimental analysis of an optical sensing microwave low-noise amplifier 105
Kink Effect in S22 for GaN and GaAs HEMTs 104
Temperature Influence on GaN HEMT Equivalent Circuit 104
Empowering Blind People Mobility: A Millimeter-Wave Radar Cane 103
Modeling of low-noise microwave HEMTs for CAD-oriented applications 102
GaN HEMT Noise Model Based on Electromagnetic Simulations 102
Optical control of gain amplifiers at microwave frequencies 102
Characterization techniques for temperature-dependent experimental analysis of microwave transistors 101
Caratterizzazione e modeling circuitale di sensori a film sottile per applicazioni industriali 101
Device Noise Parameters Characterization: Towards Extraction Automation 100
A virtual test-bench for noise figure measurements of mismatched devices 99
Caratterizzazione di transistori on wafer a basso rumore per microonde 99
Direct Extraction of Table-Based Non-Linear Device Models 98
Artificial Neural Network-based procedure for cryogenic microwave noise characterization of HEMT's 98
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 98
Typical aspects of the microwave noise performance of HEMT's at decreasing temperatures 98
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 97
Investigation on the thermal behavior for microwave GaN HEMTs 97
Optical Sensitivity of HEMT-based Devices and Low-Noise Amplifiers 97
Bias-dependence of the noise performance in Si/SiGe HBTs at microwave frequencies 96
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 96
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors 96
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 96
Wave Approach to the Noise Modeling of a GaAs HEMT under Optical Illumination 96
DOPED-FE2O3 HUMIDITY SENSORS: AN ELECTRICAL MODELING AND CIRCUIT EVALUATION 94
Analytical construction of nonlinear lookup table model for advanced microwave transistors 94
Current-gain in FETs beyond cut-off frequency 94
Langevin approach to understand the noise of microwave transistors 93
Sensori di umidità a base di film sottili di ossidi metallici drogati: caratterizzazione elettrica 93
Insight on electronic travel aids for visually impaired people: A review on the electromagnetic technology 93
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 93
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 92
Two Computational Approaches for Noise Modelingof Advanced Microwave Transistors 92
Microwave Modelling of Emerging Device Technologies 92
On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz 90
The role of modeling in the microwave characterization of low-noise active devices 89
Overview of noise measurement strategies for the characterization of active devices at microwave frequencies 89
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 89
Artificial Neural Networks in Small-Signal and Noise Modeling of Microwave Transistors 89
Radar-based monitoring of the worker activities by exploiting range-doppler and micro-doppler signatures 89
Totale 11.957
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Categoria #
all - tutte 82.807
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 82.807
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202142 0 0 0 0 0 0 0 0 0 0 0 42
2021/20221.237 15 98 21 44 49 5 91 44 9 24 282 555
2022/20233.180 266 200 128 282 229 336 50 213 1.295 46 108 27
2023/2024637 68 129 62 79 53 54 22 38 15 10 10 97
2024/20253.993 55 35 76 159 237 55 162 935 1.074 174 344 687
2025/20269.890 361 683 927 739 770 2.318 1.300 1.041 1.009 345 251 146
Totale 22.307