IRIS
CADDEMI, Alina
 Distribuzione geografica
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Continente #
NA - Nord America 6.306
AS - Asia 3.926
EU - Europa 3.561
SA - Sud America 1.813
AF - Africa 96
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 7
Totale 15.719
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Nazione #
US - Stati Uniti d'America 6.173
SG - Singapore 1.938
BR - Brasile 1.609
IE - Irlanda 1.025
CN - Cina 921
SE - Svezia 837
HK - Hong Kong 472
UA - Ucraina 374
DE - Germania 292
RU - Federazione Russa 242
FI - Finlandia 226
VN - Vietnam 220
IT - Italia 187
GB - Regno Unito 128
PL - Polonia 79
AR - Argentina 67
CA - Canada 62
IN - India 52
MX - Messico 45
EC - Ecuador 41
BD - Bangladesh 38
TR - Turchia 38
BE - Belgio 37
IQ - Iraq 31
UZ - Uzbekistan 31
ID - Indonesia 30
MA - Marocco 29
PY - Paraguay 27
CZ - Repubblica Ceca 24
ZA - Sudafrica 20
KR - Corea 18
VE - Venezuela 18
PK - Pakistan 17
CL - Cile 16
ES - Italia 16
TN - Tunisia 16
FR - Francia 15
JP - Giappone 14
UY - Uruguay 12
AL - Albania 11
CO - Colombia 11
PE - Perù 10
AT - Austria 9
IL - Israele 9
JO - Giordania 9
KZ - Kazakistan 9
AE - Emirati Arabi Uniti 8
DZ - Algeria 8
IR - Iran 8
RO - Romania 8
AU - Australia 7
EU - Europa 7
KE - Kenya 7
DO - Repubblica Dominicana 6
EG - Egitto 6
LV - Lettonia 6
NI - Nicaragua 6
NL - Olanda 6
NP - Nepal 6
PT - Portogallo 6
AZ - Azerbaigian 5
HN - Honduras 5
KG - Kirghizistan 5
LB - Libano 5
SA - Arabia Saudita 5
TW - Taiwan 5
CH - Svizzera 4
JM - Giamaica 4
OM - Oman 4
PS - Palestinian Territory 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
LT - Lituania 3
LU - Lussemburgo 3
AO - Angola 2
BH - Bahrain 2
BO - Bolivia 2
BW - Botswana 2
CY - Cipro 2
DK - Danimarca 2
GE - Georgia 2
GR - Grecia 2
HR - Croazia 2
HU - Ungheria 2
LI - Liechtenstein 2
LK - Sri Lanka 2
MD - Moldavia 2
MN - Mongolia 2
MY - Malesia 2
NG - Nigeria 2
PH - Filippine 2
RS - Serbia 2
TM - Turkmenistan 2
TZ - Tanzania 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BB - Barbados 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
Totale 15.705
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Città #
Dublin 1.025
Chandler 822
Jacksonville 759
Singapore 756
Dallas 710
Nyköping 599
Ashburn 513
Hong Kong 472
Beijing 416
Princeton 242
Medford 219
Cambridge 206
Des Moines 205
Los Angeles 170
Dearborn 157
Ann Arbor 135
The Dalles 128
Buffalo 119
Boardman 116
Messina 102
São Paulo 94
Ho Chi Minh City 88
Warsaw 76
Moscow 65
Redondo Beach 51
Rio de Janeiro 51
Hanoi 48
San Mateo 46
Woodbridge 45
Wilmington 43
Belo Horizonte 41
Jinan 41
Brasília 38
Shenyang 37
Brussels 34
New York 33
Munich 31
Nanjing 31
Portland 29
Tashkent 29
Turku 29
Seattle 27
Hangzhou 26
Curitiba 24
Hebei 24
Tianjin 24
Zhengzhou 24
Haikou 23
Council Bluffs 20
Ningbo 20
Ottawa 20
Pune 18
Baghdad 17
Brno 17
Brooklyn 17
Houston 17
Goiânia 15
Guayaquil 15
Nanchang 15
Montreal 14
Quito 14
Sorocaba 14
Stockholm 14
Uberlândia 14
Fortaleza 13
Osasco 13
Ribeirão Preto 13
Salvador 13
Taizhou 13
Asunción 12
Porto Alegre 12
Rome 12
Santa Clara 12
Campinas 11
Fuzhou 11
Haiphong 11
Jakarta 11
Montevideo 11
Sumaré 11
Dhaka 10
Guangzhou 10
Leawood 10
Saint Petersburg 10
Aracaju 9
Atlanta 9
Campo Grande 9
Catania 9
Chennai 9
Düsseldorf 9
Frankfurt am Main 9
Istanbul 9
Lanzhou 9
Nuremberg 9
St Petersburg 9
Toronto 9
Augusta 8
Caxias do Sul 8
Duque de Caxias 8
Guarulhos 8
Helsinki 8
Totale 9.651
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Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 277
A neural network approach for compact cryogenic modelling of HEMTs 141
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 130
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 130
A complete microwave characterization of GaAs HEMTs under optical illumination 128
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 120
A link between noise parameters and light exposure in GaAs pHEMT’s 118
Light exposure effects on the DC kink of AlGaN/GaN HEMTs 114
An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier 114
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 108
A low-cost smart microwave radar for short range measurements 108
A global approach to the noise and small-signal characterization of microwave field-effect transistors 106
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 106
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 106
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 103
A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier 101
A clear-cut introduction to the de-embedding concept: less is more 100
Effects of Gate-Length Scaling on Microwave MOSFET Performance 99
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction 98
Simulating noise performance of advanced devices down to cryogenic temperatures 97
Comparative analysis of microwave low-noise amplifiers under laser illumination 97
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 97
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks 93
Electrical Characteristics of 8-nm SOI n-FinFETs 93
Full characterization of microwave low-noise HEMTs: Measurement vs. Modeling 92
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures 92
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies 91
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 91
A feasibility study of a compact radar system for autonomous walking of blind people 91
Thin-film sensors for industrial electronics: Performance evaluation by circuit model simulation 90
Noise parameters of HEMTs: Analysis of their properties from a circuit model approach 89
A review on biomedical mimo radars for vital sign detection and human localization 89
Artificial neural networks for small-signal modelling of microwave FET's 88
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 88
Automotive Anti-Abandon Systems: A Millimeter-Wave Radar Sensor for the Detection of Child Presence 88
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 88
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 87
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 87
A novel approach for crosstalk minimisation in frequency modulated continuous wave radars 87
An Electromagnetic Sensor Prototype to Assist Visually Impaired and Blind People in Autonomous Walking 86
A review on the artificial neural network applications for small-signal modeling of microwave FETs 86
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 85
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 84
GaN HEMT noise modeling based on 50-Ω noise factor 84
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 82
Cryogenic HEMT noise modeling by artificial neural networks 82
Accurate multibias equivalent-circuit extraction for GaNHEMTs 82
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 82
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 81
Caratterizzazione e modeling circuitale di sensori a film sottile per applicazioni industriali 81
Systematic experimental analysis of an optical sensing microwave low-noise amplifier 81
Temperature Influence on GaN HEMT Equivalent Circuit 80
Artificial Neural Network-based procedure for cryogenic microwave noise characterization of HEMT's 79
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 79
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 78
Langevin approach to understand the noise of microwave transistors 78
Characterization techniques for temperature-dependent experimental analysis of microwave transistors 78
Caratterizzazione di transistori on wafer a basso rumore per microonde 78
Optical control of gain amplifiers at microwave frequencies 76
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 75
Vital Sign Detection and Radar Self-Motion Cancellation through Clutter Identification 75
Direct Extraction of Table-Based Non-Linear Device Models 74
Performance analysis of a microwave low-noise amplifier under laser illumination 74
DOPED-FE2O3 HUMIDITY SENSORS: AN ELECTRICAL MODELING AND CIRCUIT EVALUATION 73
Sensori di umidità a base di film sottili di ossidi metallici drogati: caratterizzazione elettrica 73
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 73
GaN HEMT Noise Model Based on Electromagnetic Simulations 73
Empowering Blind People Mobility: A Millimeter-Wave Radar Cane 73
A scalable HEMT noise model based on FW-EM analyses 73
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling 72
Wave Approach to the Noise Modeling of a GaAs HEMT under Optical Illumination 72
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors 71
Determination and validation of new nonlinear FinFET model based on lookup tables 71
Black-box noise modeling of GaAs HEMTs under illumination 71
Two Computational Approaches for Noise Modelingof Advanced Microwave Transistors 70
Investigation on the thermal behavior for microwave GaN HEMTs 70
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 70
GaN HEMT modelling through 50-Ω NF measurements 70
A study on dynamic threshold for the crosstalk reduction in frequency-modulated radars 70
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 69
Bias-dependence of the noise performance in Si/SiGe HBTs at microwave frequencies 69
Tecniche di caratterizzazione criogenica per dispositivi avanzati alle iperfrequenze 69
An evolution algorithm for noise modeling of HEMT's down to cryogenic temperatures 69
A neural network approach for nonlinear modelling of LDMOSFETs 69
Device Noise Parameters Characterization: Towards Extraction Automation 69
Overview of noise measurement strategies for the characterization of active devices at microwave frequencies 68
Microwave transistor noise models including temperature dependence 68
Microwave Modelling of Emerging Device Technologies 68
On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz 68
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's 68
Caratterizzazione a larga banda delle prestazioni di rumore di dispositivi a semiconduttore 68
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 68
Analytical construction of nonlinear lookup table model for advanced microwave transistors 67
Impact of the self-generated heat on the scalability of HEMTs 67
Determination of HEMT's noise parameters vs. temperature using two measurement methods 67
Kink Effect in S22 for GaN and GaAs HEMTs 67
Current-gain in FETs beyond cut-off frequency 67
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 66
Caratterizzazione a microonde di hemt e modellistica per piccoli segnali con tecniche di estrazione diretta 66
Electrical characterization and modeling of thin-films humidity sensors 66
Totale 8.610
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Categoria #
all - tutte 68.466
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 68.466
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021477 0 0 0 0 0 118 13 86 30 112 76 42
2021/20221.237 15 98 21 44 49 5 91 44 9 24 282 555
2022/20233.180 266 200 128 282 229 336 50 213 1.295 46 108 27
2023/2024637 68 129 62 79 53 54 22 38 15 10 10 97
2024/20253.993 55 35 76 159 237 55 162 935 1.074 174 344 687
2025/20263.607 361 683 927 739 770 127 0 0 0 0 0 0
Totale 16.024