IRIS
CADDEMI, Alina
 Distribuzione geografica
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Continente #
NA - Nord America 7.990
EU - Europa 7.691
AS - Asia 4.894
SA - Sud America 1.925
Continente sconosciuto - Info sul continente non disponibili 315
AF - Africa 131
OC - Oceania 9
Totale 22.955
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Nazione #
US - Stati Uniti d'America 7.805
RU - Federazione Russa 4.021
SG - Singapore 2.353
BR - Brasile 1.660
CN - Cina 1.238
IE - Irlanda 1.027
SE - Svezia 838
HK - Hong Kong 501
UA - Ucraina 377
DE - Germania 316
VN - Vietnam 257
IT - Italia 240
FR - Francia 230
FI - Finlandia 226
GB - Regno Unito 153
IN - India 92
AR - Argentina 87
PL - Polonia 81
CA - Canada 72
BD - Bangladesh 56
TR - Turchia 53
MX - Messico 50
EC - Ecuador 49
IQ - Iraq 49
BE - Belgio 38
ID - Indonesia 36
MA - Marocco 36
UZ - Uzbekistan 35
PY - Paraguay 31
ZA - Sudafrica 29
VE - Venezuela 27
JP - Giappone 26
PK - Pakistan 26
CO - Colombia 24
CZ - Repubblica Ceca 24
ES - Italia 24
KR - Corea 22
CL - Cile 21
TN - Tunisia 21
JM - Giamaica 15
SA - Arabia Saudita 15
NL - Olanda 14
UY - Uruguay 13
IL - Israele 12
AE - Emirati Arabi Uniti 11
AL - Albania 11
DZ - Algeria 11
JO - Giordania 11
KZ - Kazakistan 11
PE - Perù 11
AT - Austria 10
DO - Repubblica Dominicana 9
EG - Egitto 9
PH - Filippine 9
AU - Australia 8
IR - Iran 8
KE - Kenya 8
PT - Portogallo 8
RO - Romania 8
AZ - Azerbaigian 7
EU - Europa 7
HN - Honduras 7
LV - Lettonia 7
NI - Nicaragua 7
NP - Nepal 7
PS - Palestinian Territory 7
GT - Guatemala 6
KG - Kirghizistan 6
CH - Svizzera 5
LB - Libano 5
OM - Oman 5
TW - Taiwan 5
CR - Costa Rica 4
GR - Grecia 4
LT - Lituania 4
MY - Malesia 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BH - Bahrain 3
BN - Brunei Darussalam 3
GE - Georgia 3
LU - Lussemburgo 3
MD - Moldavia 3
MN - Mongolia 3
NG - Nigeria 3
PA - Panama 3
PR - Porto Rico 3
SV - El Salvador 3
TH - Thailandia 3
AO - Angola 2
BO - Bolivia 2
BW - Botswana 2
CY - Cipro 2
DK - Danimarca 2
ET - Etiopia 2
HR - Croazia 2
HU - Ungheria 2
LI - Liechtenstein 2
LK - Sri Lanka 2
MU - Mauritius 2
Totale 22.621
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Città #
Moscow 1.328
Singapore 1.042
Dublin 1.027
Ashburn 929
Chandler 822
Jacksonville 761
Dallas 726
Nyköping 599
Hong Kong 500
Beijing 430
San Jose 349
Council Bluffs 341
The Dalles 251
Princeton 243
Medford 219
Cambridge 206
Des Moines 206
Lauterbourg 202
Los Angeles 179
Dearborn 157
Ann Arbor 135
Buffalo 121
Boardman 117
Messina 106
Ho Chi Minh City 100
São Paulo 97
Warsaw 77
Hanoi 55
Santa Clara 55
Rio de Janeiro 53
Redondo Beach 51
San Mateo 46
Orem 45
Woodbridge 45
New York 44
Wilmington 43
Belo Horizonte 41
Columbus 41
Guangzhou 41
Jinan 41
Brasília 38
Shenyang 37
Brussels 35
Shanghai 33
Tashkent 33
Tianjin 33
Munich 31
Nanjing 31
Portland 29
Turku 29
Frankfurt am Main 28
Seattle 28
Curitiba 26
Hangzhou 26
Hebei 24
Zhengzhou 24
Haikou 23
Houston 23
Baghdad 21
Ningbo 21
Brooklyn 20
Ottawa 20
Pune 20
Tokyo 19
Chennai 18
Shenzhen 18
Brno 17
Guayaquil 17
Quito 17
Rome 17
Asunción 15
Atlanta 15
Goiânia 15
Nanchang 15
Salvador 15
Sorocaba 15
Stockholm 15
Dhaka 14
Fortaleza 14
Montreal 14
Uberlândia 14
Denver 13
Manchester 13
Nuremberg 13
Osasco 13
Porto Alegre 13
Ribeirão Preto 13
Taizhou 13
Haiphong 12
Jakarta 12
Montevideo 12
Campinas 11
Fuzhou 11
Istanbul 11
Johannesburg 11
Mexico City 11
Phoenix 11
San Francisco 11
Sumaré 11
Toronto 11
Totale 13.014
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Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 300
A neural network approach for compact cryogenic modelling of HEMTs 196
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 194
A complete microwave characterization of GaAs HEMTs under optical illumination 186
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 184
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 183
An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier 177
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 169
Light exposure effects on the DC kink of AlGaN/GaN HEMTs 169
A link between noise parameters and light exposure in GaAs pHEMT’s 166
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 165
A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier 161
A low-cost smart microwave radar for short range measurements 158
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 154
A clear-cut introduction to the de-embedding concept: less is more 151
A global approach to the noise and small-signal characterization of microwave field-effect transistors 150
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 147
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 146
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction 146
An Electromagnetic Sensor Prototype to Assist Visually Impaired and Blind People in Autonomous Walking 143
Comparative analysis of microwave low-noise amplifiers under laser illumination 142
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 142
A feasibility study of a compact radar system for autonomous walking of blind people 142
A novel approach for crosstalk minimisation in frequency modulated continuous wave radars 141
Simulating noise performance of advanced devices down to cryogenic temperatures 139
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 137
A review on biomedical mimo radars for vital sign detection and human localization 135
A review on the artificial neural network applications for small-signal modeling of microwave FETs 134
Automotive Anti-Abandon Systems: A Millimeter-Wave Radar Sensor for the Detection of Child Presence 134
Electrical Characteristics of 8-nm SOI n-FinFETs 130
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 127
GaN HEMT noise modeling based on 50-Ω noise factor 127
Noise parameters of HEMTs: Analysis of their properties from a circuit model approach 125
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 123
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures 122
Vital Sign Detection and Radar Self-Motion Cancellation through Clutter Identification 122
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies 121
Cryogenic HEMT noise modeling by artificial neural networks 118
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks 118
Full characterization of microwave low-noise HEMTs: Measurement vs. Modeling 117
Determination and validation of new nonlinear FinFET model based on lookup tables 117
A scalable HEMT noise model based on FW-EM analyses 117
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 116
A study on dynamic threshold for the crosstalk reduction in frequency-modulated radars 115
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 114
Effects of Gate-Length Scaling on Microwave MOSFET Performance 114
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 113
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 113
GaN HEMT modelling through 50-Ω NF measurements 113
Artificial neural networks for small-signal modelling of microwave FET's 112
Thin-film sensors for industrial electronics: Performance evaluation by circuit model simulation 112
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 111
Full characterization of microwave low noise HEMTs: measurements vs. modeling 109
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 109
A straight-line equation for the notch tailoring of a microwave extra wideband filter 109
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 109
A neural network approach for nonlinear modelling of LDMOSFETs 108
Black-box noise modeling of GaAs HEMTs under illumination 108
Performance analysis of a microwave low-noise amplifier under laser illumination 108
Characterization techniques for temperature-dependent experimental analysis of microwave transistors 107
Accurate multibias equivalent-circuit extraction for GaNHEMTs 107
Kink Effect in S22 for GaN and GaAs HEMTs 107
Temperature Influence on GaN HEMT Equivalent Circuit 107
Systematic experimental analysis of an optical sensing microwave low-noise amplifier 107
Empowering Blind People Mobility: A Millimeter-Wave Radar Cane 107
Modeling of low-noise microwave HEMTs for CAD-oriented applications 105
GaN HEMT Noise Model Based on Electromagnetic Simulations 104
Optical control of gain amplifiers at microwave frequencies 104
Direct Extraction of Table-Based Non-Linear Device Models 103
Caratterizzazione e modeling circuitale di sensori a film sottile per applicazioni industriali 103
Caratterizzazione di transistori on wafer a basso rumore per microonde 103
Bias-dependence of the noise performance in Si/SiGe HBTs at microwave frequencies 102
Artificial Neural Network-based procedure for cryogenic microwave noise characterization of HEMT's 102
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 102
Typical aspects of the microwave noise performance of HEMT's at decreasing temperatures 102
Device Noise Parameters Characterization: Towards Extraction Automation 102
Optical Sensitivity of HEMT-based Devices and Low-Noise Amplifiers 102
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 101
Investigation on the thermal behavior for microwave GaN HEMTs 100
A virtual test-bench for noise figure measurements of mismatched devices 100
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors 99
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 98
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 98
Wave Approach to the Noise Modeling of a GaAs HEMT under Optical Illumination 98
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 97
Current-gain in FETs beyond cut-off frequency 97
Langevin approach to understand the noise of microwave transistors 96
DOPED-FE2O3 HUMIDITY SENSORS: AN ELECTRICAL MODELING AND CIRCUIT EVALUATION 96
Two Computational Approaches for Noise Modelingof Advanced Microwave Transistors 95
Analytical construction of nonlinear lookup table model for advanced microwave transistors 95
Sensori di umidità a base di film sottili di ossidi metallici drogati: caratterizzazione elettrica 95
Radar-based monitoring of the worker activities by exploiting range-doppler and micro-doppler signatures 95
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 94
Microwave Modelling of Emerging Device Technologies 94
The role of modeling in the microwave characterization of low-noise active devices 93
Overview of noise measurement strategies for the characterization of active devices at microwave frequencies 93
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 93
Insight on electronic travel aids for visually impaired people: A review on the electromagnetic technology 93
Wave approach to noise modeling of scaled on-wafer GaAs HEMTs 93
Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers 91
Totale 12.248
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Categoria #
all - tutte 86.864
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 86.864
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.222 0 98 21 44 49 5 91 44 9 24 282 555
2022/20233.180 266 200 128 282 229 336 50 213 1.295 46 108 27
2023/2024637 68 129 62 79 53 54 22 38 15 10 10 97
2024/20253.993 55 35 76 159 237 55 162 935 1.074 174 344 687
2025/20269.938 361 683 927 739 770 2.318 1.300 1.041 1.009 345 251 194
2026/2027600 198 402 0 0 0 0 0 0 0 0 0 0
Totale 22.955