IRIS
CADDEMI, Alina
 Distribuzione geografica
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Continente #
EU - Europa 7.652
NA - Nord America 7.020
AS - Asia 4.822
SA - Sud America 1.904
AF - Africa 130
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 9
Totale 21.547
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Nazione #
US - Stati Uniti d'America 6.867
RU - Federazione Russa 4.021
SG - Singapore 2.339
BR - Brasile 1.652
CN - Cina 1.204
IE - Irlanda 1.027
SE - Svezia 838
HK - Hong Kong 496
UA - Ucraina 377
DE - Germania 315
VN - Vietnam 255
FR - Francia 228
FI - Finlandia 226
IT - Italia 215
GB - Regno Unito 152
IN - India 90
AR - Argentina 84
PL - Polonia 81
CA - Canada 65
TR - Turchia 53
BD - Bangladesh 52
IQ - Iraq 48
MX - Messico 47
EC - Ecuador 46
BE - Belgio 37
MA - Marocco 36
UZ - Uzbekistan 35
ID - Indonesia 34
PY - Paraguay 31
ZA - Sudafrica 29
VE - Venezuela 27
PK - Pakistan 26
JP - Giappone 25
CZ - Repubblica Ceca 24
TN - Tunisia 21
CL - Cile 20
ES - Italia 20
CO - Colombia 19
KR - Corea 18
SA - Arabia Saudita 15
NL - Olanda 14
IL - Israele 12
UY - Uruguay 12
AE - Emirati Arabi Uniti 11
AL - Albania 11
DZ - Algeria 11
JM - Giamaica 11
JO - Giordania 11
KZ - Kazakistan 11
PE - Perù 11
AT - Austria 10
DO - Repubblica Dominicana 9
AU - Australia 8
EG - Egitto 8
IR - Iran 8
KE - Kenya 8
PH - Filippine 8
RO - Romania 8
AZ - Azerbaigian 7
EU - Europa 7
NP - Nepal 7
PS - Palestinian Territory 7
KG - Kirghizistan 6
LV - Lettonia 6
NI - Nicaragua 6
PT - Portogallo 6
HN - Honduras 5
LB - Libano 5
OM - Oman 5
TW - Taiwan 5
CH - Svizzera 4
GR - Grecia 4
LT - Lituania 4
MY - Malesia 4
BA - Bosnia-Erzegovina 3
BG - Bulgaria 3
BH - Bahrain 3
GE - Georgia 3
LU - Lussemburgo 3
MN - Mongolia 3
NG - Nigeria 3
PA - Panama 3
AO - Angola 2
BN - Brunei Darussalam 2
BO - Bolivia 2
BW - Botswana 2
CY - Cipro 2
DK - Danimarca 2
ET - Etiopia 2
GT - Guatemala 2
HR - Croazia 2
HU - Ungheria 2
LI - Liechtenstein 2
LK - Sri Lanka 2
MD - Moldavia 2
MU - Mauritius 2
RS - Serbia 2
TH - Thailandia 2
TM - Turkmenistan 2
TT - Trinidad e Tobago 2
Totale 21.525
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Città #
Moscow 1.328
Singapore 1.039
Dublin 1.027
Chandler 822
Ashburn 814
Jacksonville 760
Dallas 713
Nyköping 599
Hong Kong 496
Beijing 422
The Dalles 250
Princeton 242
Medford 219
Cambridge 206
Des Moines 206
Lauterbourg 202
Los Angeles 173
San Jose 169
Dearborn 157
Ann Arbor 135
Buffalo 120
Boardman 117
Messina 106
Ho Chi Minh City 99
São Paulo 97
Warsaw 77
Hanoi 55
Rio de Janeiro 53
Redondo Beach 51
San Mateo 46
Woodbridge 45
Wilmington 43
Belo Horizonte 41
Guangzhou 41
Jinan 41
Brasília 38
New York 38
Shenyang 37
Orem 36
Brussels 34
Tashkent 33
Tianjin 33
Shanghai 32
Munich 31
Nanjing 31
Portland 29
Turku 29
Frankfurt am Main 28
Seattle 28
Council Bluffs 27
Hangzhou 26
Curitiba 25
Santa Clara 25
Hebei 24
Zhengzhou 24
Haikou 23
Baghdad 21
Ningbo 20
Ottawa 20
Pune 20
Tokyo 19
Brooklyn 18
Chennai 18
Shenzhen 18
Brno 17
Guayaquil 17
Houston 17
Quito 16
Asunción 15
Goiânia 15
Nanchang 15
Salvador 15
Sorocaba 15
Stockholm 15
Dhaka 14
Fortaleza 14
Montreal 14
Uberlândia 14
Manchester 13
Nuremberg 13
Osasco 13
Porto Alegre 13
Ribeirão Preto 13
Rome 13
Taizhou 13
Atlanta 12
Haiphong 12
Jakarta 12
Campinas 11
Fuzhou 11
Istanbul 11
Johannesburg 11
Montevideo 11
Sumaré 11
Catania 10
Leawood 10
London 10
Saint Petersburg 10
Toronto 10
Aracaju 9
Totale 12.261
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Nome #
Temperature dependence of electrical parameters of silicon-on-insulator triple gate n-channel fin field effect transistor 297
A neural network approach for compact cryogenic modelling of HEMTs 191
3-D simulation of nanoscale SOI n-FinFET at a gate length of 8 nm using ATLAS SILVACO 188
A NEW MILLIMETER WAVE SMALL-SIGNAL MODEL FOR pHEMT DEVICES ACCOUNTING FOR THE OUTPUT CONDUCTANCE TIME DELAY 180
A complete microwave characterization of GaAs HEMTs under optical illumination 178
A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology 175
An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier 170
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 166
Light exposure effects on the DC kink of AlGaN/GaN HEMTs 166
Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction 160
A link between noise parameters and light exposure in GaAs pHEMT’s 158
A Laser Beam for Boosting the Power Added Efficiency of an X-Band GaN MMIC Amplifier 152
Inverse modeling of an AlGaAs/GaAs HEMT from DC and microwave measurements 148
A low-cost smart microwave radar for short range measurements 148
A global approach to the noise and small-signal characterization of microwave field-effect transistors 146
A clear-cut introduction to the de-embedding concept: less is more 146
A clear-cut understanding of the current-gain peak in HEMTs: theory and experiments 143
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 143
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction 139
A novel approach for crosstalk minimisation in frequency modulated continuous wave radars 138
A feasibility study of a compact radar system for autonomous walking of blind people 136
Comparative analysis of microwave low-noise amplifiers under laser illumination 134
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs 134
An Electromagnetic Sensor Prototype to Assist Visually Impaired and Blind People in Autonomous Walking 134
A review on biomedical mimo radars for vital sign detection and human localization 133
Light sensitivity of GaAs pHEMT's: A close insight into the microwave noise behavior 132
Simulating noise performance of advanced devices down to cryogenic temperatures 130
Electrical Characteristics of 8-nm SOI n-FinFETs 128
A review on the artificial neural network applications for small-signal modeling of microwave FETs 127
Automotive Anti-Abandon Systems: A Millimeter-Wave Radar Sensor for the Detection of Child Presence 125
GaN HEMT noise modeling based on 50-Ω noise factor 122
Noise parameters of HEMTs: Analysis of their properties from a circuit model approach 118
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures 117
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks 116
ANALYTICAL EXTRACTION OF SMALL AND LARGE SIGNAL MODELS FOR FINFET VARACTORS 115
Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length 115
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies 114
Determination and validation of new nonlinear FinFET model based on lookup tables 114
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 113
A study on dynamic threshold for the crosstalk reduction in frequency-modulated radars 112
Effects of Gate-Length Scaling on Microwave MOSFET Performance 112
A scalable HEMT noise model based on FW-EM analyses 112
Full characterization of microwave low-noise HEMTs: Measurement vs. Modeling 111
Vital Sign Detection and Radar Self-Motion Cancellation through Clutter Identification 111
ON THE SMALL-SIGNAL MODELING OF ADVANCED MICROWAVE FETs: A COMPARATIVE STUDY 109
Cryogenic HEMT noise modeling by artificial neural networks 109
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature 109
Artificial neural networks for small-signal modelling of microwave FET's 109
Thin-film sensors for industrial electronics: Performance evaluation by circuit model simulation 108
GaN HEMT modelling through 50-Ω NF measurements 108
Analysis of microwave noise parameters of scaled AlGaAs/GaAs HEMT's under light exposure 107
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 106
ANALYSIS OF QUASI-STATIC ASSUMPTION IN NONLINEAR FinFET MODEL 105
A neural network approach for nonlinear modelling of LDMOSFETs 105
Accurate multibias equivalent-circuit extraction for GaNHEMTs 104
Capabilities and limitations of equivalent circuit models for modeling advanced Si FET devices 104
A straight-line equation for the notch tailoring of a microwave extra wideband filter 104
Systematic experimental analysis of an optical sensing microwave low-noise amplifier 104
Temperature Influence on GaN HEMT Equivalent Circuit 103
Empowering Blind People Mobility: A Millimeter-Wave Radar Cane 103
Performance analysis of a microwave low-noise amplifier under laser illumination 102
Caratterizzazione e modeling circuitale di sensori a film sottile per applicazioni industriali 101
Full characterization of microwave low noise HEMTs: measurements vs. modeling 101
Kink Effect in S22 for GaN and GaAs HEMTs 101
Black-box noise modeling of GaAs HEMTs under illumination 101
Optical control of gain amplifiers at microwave frequencies 101
Characterization techniques for temperature-dependent experimental analysis of microwave transistors 100
GaN HEMT Noise Model Based on Electromagnetic Simulations 100
Caratterizzazione di transistori on wafer a basso rumore per microonde 99
Direct Extraction of Table-Based Non-Linear Device Models 98
Artificial Neural Network-based procedure for cryogenic microwave noise characterization of HEMT's 97
On Wafer Scaled GaAs HEMTs: Direct and Robust Small Signal Modelling up to 50 GHz 97
Accurate GaN HEMT non-quasi-static large-signal model including dispersive effects 97
Modeling of low-noise microwave HEMTs for CAD-oriented applications 97
Device Noise Parameters Characterization: Towards Extraction Automation 97
A virtual test-bench for noise figure measurements of mismatched devices 96
Bias-dependence of the noise performance in Si/SiGe HBTs at microwave frequencies 95
Tecniche di caratterizzazione criogenica per componenti di LNA in applicazioni avanzate alle iperfrequenze 95
Investigation on the thermal behavior for microwave GaN HEMTs 95
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors 94
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K 94
Typical aspects of the microwave noise performance of HEMT's at decreasing temperatures 94
Optical Sensitivity of HEMT-based Devices and Low-Noise Amplifiers 94
Wave Approach to the Noise Modeling of a GaAs HEMT under Optical Illumination 94
DOPED-FE2O3 HUMIDITY SENSORS: AN ELECTRICAL MODELING AND CIRCUIT EVALUATION 93
Langevin approach to understand the noise of microwave transistors 92
Two Computational Approaches for Noise Modelingof Advanced Microwave Transistors 92
Sensori di umidità a base di film sottili di ossidi metallici drogati: caratterizzazione elettrica 92
Current-gain in FETs beyond cut-off frequency 92
Insight on electronic travel aids for visually impaired people: A review on the electromagnetic technology 91
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology 90
Caratterizzazione e Modellistica a Microonde di Transistori Avanzati 89
Microwave characterization and modelling of packaged HEMT's by a direct extraction procedure at cryogenic temperatures 89
Analytical construction of nonlinear lookup table model for advanced microwave transistors 89
Artificial Neural Networks in Small-Signal and Noise Modeling of Microwave Transistors 89
The role of modeling in the microwave characterization of low-noise active devices 88
Overview of noise measurement strategies for the characterization of active devices at microwave frequencies 88
A robust approach for the direct extraction of HEMT circuit elements vs. bias and temperature 88
On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz 88
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 88
Totale 11.722
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Categoria #
all - tutte 78.198
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.198
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021230 0 0 0 0 0 0 0 0 0 112 76 42
2021/20221.237 15 98 21 44 49 5 91 44 9 24 282 555
2022/20233.180 266 200 128 282 229 336 50 213 1.295 46 108 27
2023/2024637 68 129 62 79 53 54 22 38 15 10 10 97
2024/20253.993 55 35 76 159 237 55 162 935 1.074 174 344 687
2025/20269.435 361 683 927 739 770 2.318 1.300 1.041 1.009 287 0 0
Totale 21.852